Please use this identifier to cite or link to this item:
|Title:||Boundary effects on the resonant coupling of the excitation modes of semiconductor quantum wells||Authors:||Guo, Q.
|Issue Date:||14-Jun-1999||Citation:||Guo, Q., Feng, Y.P., Poon, H.C., Ong, C.K. (1999-06-14). Boundary effects on the resonant coupling of the excitation modes of semiconductor quantum wells. Journal of Physics Condensed Matter 11 (23) : 4557-4574. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/11/23/309||Abstract:||An alternative approach based on the invariant imbedding method and the random phase approximation is used to study the excitation spectra of both neutral and parabolic quantum wells. Compared to other methods, this approach is efficient and leads to more stable solutions. It also provides a convenient way for studying boundary effects. The calculated excitation spectra for both types of quantum well agree well with experimental observations and previous calculations. The effects of the boundary condition on the excitation spectra were extensively studied. It was found that the positions and relative strengths of resonant peaks are sensitive to the boundary condition. The evolution of some of the resonant peaks can be attributed to the coupling between collective plasma modes and the intersubband transitions.||Source Title:||Journal of Physics Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/95886||ISSN:||09538984||DOI:||10.1088/0953-8984/11/23/309|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 9, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.