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dc.titleBound electronic Kerr effect and self-focusing induced damage in second-harmonic-generation crystals
dc.contributor.authorLi, H.
dc.contributor.authorZhou, F.
dc.contributor.authorZhang, X.
dc.contributor.authorJi, W.
dc.identifier.citationLi, H.,Zhou, F.,Zhang, X.,Ji, W. (1997-12-01). Bound electronic Kerr effect and self-focusing induced damage in second-harmonic-generation crystals. Optics Communications 144 (1-3) : 75-81. ScholarBank@NUS Repository.
dc.description.abstractWe present an investigation of third-order electronic nonlinearities in second-harmonic-generation (SHG) crystals using a picosecond 532 nm wavelength beam. The crystals studied include KTP, KTA, BBO, LBO and LiNbO3. Using the Z-scan technique the nonlinear refractive indexes and two-photon absorption coefficients in the z-cut crystals are measured, as well as in KTP, BBO and LBO along the phase-matching angles for the SHG of 1064 nm radiation. The microscopic origin of the measured refractive nonlinearity can be understood in terms of bound electronic effects, and the theoretical predictions are in agreement with our measurements. Finally, we perform an experimental study on the self-focusing induced damage in these crystals by extending the Z-scan method. The measured damage threshold is inversely proportional to the nonlinear refractive index and the thickness of a crystal. © 1997 Elsevier Science B.V.
dc.subjectNonlinear refractive index and nonlinear absorption
dc.subjectOptical damage
dc.subjectSHG crystals
dc.subjectZ-scan technique
dc.description.sourcetitleOptics Communications
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