Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4734507
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dc.titleBonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation
dc.contributor.authorWang, Y.
dc.contributor.authorZhang, D.H.
dc.contributor.authorChen, X.Z.
dc.contributor.authorJin, Y.J.
dc.contributor.authorLi, J.H.
dc.contributor.authorLiu, C.J.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorZhang, S.
dc.contributor.authorRamam, A.
dc.date.accessioned2014-10-16T09:16:55Z
dc.date.available2014-10-16T09:16:55Z
dc.date.issued2012-07-09
dc.identifier.citationWang, Y., Zhang, D.H., Chen, X.Z., Jin, Y.J., Li, J.H., Liu, C.J., Wee, A.T.S., Zhang, S., Ramam, A. (2012-07-09). Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation. Applied Physics Letters 101 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4734507
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95879
dc.description.abstractWe report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy measurements at different depths reveal that majority of the nitrogen forms In-N bonds in the uniform region but exists as interstitial defects in the tail region. The diffusion coefficients of nitrogen in InSb were obtained by fitting the modified Fick's law with experimental data and the activation energy of 0.55 ± 0.04 eV extracted confirms the interstitial dominating diffusion of nitrogen in the InSb wafer. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4734507
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4734507
dc.description.sourcetitleApplied Physics Letters
dc.description.volume101
dc.description.issue2
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000306360600027
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