Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2010.01.115
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dc.titleBand alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects
dc.contributor.authorYang, M.
dc.contributor.authorDeng, W.S.
dc.contributor.authorChen, Q.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorWong, L.M.
dc.contributor.authorChai, J.W.
dc.contributor.authorPan, J.S.
dc.contributor.authorWang, S.J.
dc.contributor.authorNg, C.M.
dc.date.accessioned2014-10-16T09:16:31Z
dc.date.available2014-10-16T09:16:31Z
dc.date.issued2010-05-15
dc.identifier.citationYang, M., Deng, W.S., Chen, Q., Feng, Y.P., Wong, L.M., Chai, J.W., Pan, J.S., Wang, S.J., Ng, C.M. (2010-05-15). Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects. Applied Surface Science 256 (15) : 4850-4853. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2010.01.115
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95847
dc.description.abstractHigh-κ dielectrics SrZrO3 were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600° C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO3 became polycrystalline in the meantime. © 2010 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2010.01.115
dc.sourceScopus
dc.subjectGate dielectrics
dc.subjectGe-FETs
dc.subjectHigh-κ
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.apsusc.2010.01.115
dc.description.sourcetitleApplied Surface Science
dc.description.volume256
dc.description.issue15
dc.description.page4850-4853
dc.description.codenASUSE
dc.identifier.isiut000276716400017
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