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|Title:||Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication||Authors:||Zhao, F.F.
|Issue Date:||Mar-2003||Citation:||Zhao, F.F.,Chen, S.Y.,Shen, Z.X.,Gao, X.S.,Zheng, J.Z.,See, A.K.,Chan, L.H. (2003-03). Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 862-867. ScholarBank@NUS Repository.||Abstract:||The use of micro-Raman spectroscopy as a powerful technique for the study of a variety of problems related to metal salicides for Si device fabrication is discussed. The technique is advantageous in providing information about phase, film thickness, film orientation, and stress all at the same time. Local orientations of the NiSi grains are investigated using relative intensity of the NiSi Raman peaks with micron spatial resolution which provides complementary information to the space-averaged x-ray diffraction results.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/95812||ISSN:||10711023|
|Appears in Collections:||Staff Publications|
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