Please use this identifier to cite or link to this item:
Title: Anomalous temperature behavior of Raman spectra from visible light emitting porous silicon
Authors: Feng, Z.C. 
Payne, J.R.
Covington, B.C.
Issue Date: Jul-1993
Citation: Feng, Z.C.,Payne, J.R.,Covington, B.C. (1993-07). Anomalous temperature behavior of Raman spectra from visible light emitting porous silicon. Solid State Communications 87 (2) : 131-134. ScholarBank@NUS Repository.
Abstract: We performed a Raman scattering study on porous Si which exhibited red light emission. Porous Si membranes (100-200 μm) were formed by anodic dissolution (current density = 70-100 mA/cm2) of (111) oriented, heavy boron doped, p-type Si wafers. The membranes display red light when illuminated with white or flash light. They possess a major Raman line with the wavenumber position near, but slightly lower than that of crystalline (c-) Si. This line width is broader than that of c-Si, and narrower than, or comparable with, that of micro-crystalline (μc-) Si. Its temperature behavior is quite different from that of c- and μc-Si. The Raman line from our porous Si shifts down in wavenumber and broadens with a decrease of temperature from 300 to 80 K, which is characteristic of the soft-mode nature, and is opposite to that of c-Si and μc-Si. Three possible mechanisms responsible for this anomalous temperature behavior of the Raman spectra from porous Si are discussed qualitatively. © 1993.
Source Title: Solid State Communications
ISSN: 00381098
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on May 21, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.