Please use this identifier to cite or link to this item: https://doi.org/10.1557/jmr.2007.0364
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dc.titleAchieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors
dc.contributor.authorLiu, Z.W.
dc.contributor.authorYeo, S.W.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:15:04Z
dc.date.available2014-10-16T09:15:04Z
dc.date.issued2007-10
dc.identifier.citationLiu, Z.W., Yeo, S.W., Ong, C.K. (2007-10). Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors. Journal of Materials Research 22 (10) : 2668-2675. ScholarBank@NUS Repository. https://doi.org/10.1557/jmr.2007.0364
dc.identifier.issn08842914
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95722
dc.description.abstractN-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400-600 °C for 10-60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021-1022 cm-3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm-3, whereas the p-type ZnO:N films had hole concentrations of 1014-1016 cm-3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm-3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source. © 2007 Materials Research Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1557/jmr.2007.0364
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1557/jmr.2007.0364
dc.description.sourcetitleJournal of Materials Research
dc.description.volume22
dc.description.issue10
dc.description.page2668-2675
dc.description.codenJMREE
dc.identifier.isiut000250033800006
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