Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2790075
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dc.titleAb initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
dc.contributor.authorYang, M.
dc.contributor.authorWang, S.J.
dc.contributor.authorPeng, G.W.
dc.contributor.authorWu, R.Q.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-10-16T09:14:56Z
dc.date.available2014-10-16T09:14:56Z
dc.date.issued2007
dc.identifier.citationYang, M., Wang, S.J., Peng, G.W., Wu, R.Q., Feng, Y.P. (2007). Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric. Applied Physics Letters 91 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2790075
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95712
dc.description.abstractFirst-principles calculations based on density-functional theory and local-density approximation were carried out to investigate intrinsic defect properties in Β- Ge3 N4. It was found that nitrogen vacancies are the main source of intrinsic defects in Ge3 N4 due to their low formation energy. The N vacancies might become charge trapping centers since they induce energy levels near the Ge conduction band edge and in the middle of the Ge3 N4 band gap. The formation energy of intrinsic defects in Ge3 N4 is sensitive to N chemical potential, and N-rich ambient is favorable to reduce the concentration of N vacancies. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2790075
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2790075
dc.description.sourcetitleApplied Physics Letters
dc.description.volume91
dc.description.issue13
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000249787000070
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