Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3663386
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dc.titleA universal gauge for thermal conductivity of silicon nanowires with different cross sectional geometries
dc.contributor.authorChen, J.
dc.contributor.authorZhang, G.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:14:48Z
dc.date.available2014-10-16T09:14:48Z
dc.date.issued2011-11-28
dc.identifier.citationChen, J., Zhang, G., Li, B. (2011-11-28). A universal gauge for thermal conductivity of silicon nanowires with different cross sectional geometries. Journal of Chemical Physics 135 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3663386
dc.identifier.issn00219606
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95701
dc.description.abstractBy using molecular dynamics simulations, we study thermal conductivity of silicon nanowires (SiNWs) with different cross sectional geometries. It is found that thermal conductivity decreases monotonically with the increase of surface-to-volume ratio (SVR). More interestingly, a simple universal linear dependence of thermal conductivity on SVR is observed for SiNWs with modest cross sectional area (larger than 20 nm2), regardless of the cross sectional geometry. As a result, among different shaped SiNWs with the same cross sectional area, the one with triangular cross section has the lowest thermal conductivity. Our study provides not only a universal gauge for thermal conductivity among different cross sectional geometries, but also a designing guidance to tune thermal conductivity by geometry. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3663386
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.3663386
dc.description.sourcetitleJournal of Chemical Physics
dc.description.volume135
dc.description.issue20
dc.description.page-
dc.description.codenJCPSA
dc.identifier.isiut000297944600033
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