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|Title:||A universal gauge for thermal conductivity of silicon nanowires with different cross sectional geometries||Authors:||Chen, J.
|Issue Date:||28-Nov-2011||Citation:||Chen, J., Zhang, G., Li, B. (2011-11-28). A universal gauge for thermal conductivity of silicon nanowires with different cross sectional geometries. Journal of Chemical Physics 135 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3663386||Abstract:||By using molecular dynamics simulations, we study thermal conductivity of silicon nanowires (SiNWs) with different cross sectional geometries. It is found that thermal conductivity decreases monotonically with the increase of surface-to-volume ratio (SVR). More interestingly, a simple universal linear dependence of thermal conductivity on SVR is observed for SiNWs with modest cross sectional area (larger than 20 nm2), regardless of the cross sectional geometry. As a result, among different shaped SiNWs with the same cross sectional area, the one with triangular cross section has the lowest thermal conductivity. Our study provides not only a universal gauge for thermal conductivity among different cross sectional geometries, but also a designing guidance to tune thermal conductivity by geometry. © 2011 American Institute of Physics.||Source Title:||Journal of Chemical Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/95701||ISSN:||00219606||DOI:||10.1063/1.3663386|
|Appears in Collections:||Staff Publications|
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