Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl802807t
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dc.titleA universal expression of band gap for silicon nanowires of different cross-section geometries
dc.contributor.authorYao, D.
dc.contributor.authorZhang, G.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:14:47Z
dc.date.available2014-10-16T09:14:47Z
dc.date.issued2008-12
dc.identifier.citationYao, D., Zhang, G., Li, B. (2008-12). A universal expression of band gap for silicon nanowires of different cross-section geometries. Nano Letters 8 (12) : 4557-4561. ScholarBank@NUS Repository. https://doi.org/10.1021/nl802807t
dc.identifier.issn15306984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95700
dc.description.abstractWe use the first-principles tight binding method to investigate the electronic structure and band gap of [110] oriented hydrogen-passivated silicon nanowires (SiNWs) of different cross-sectional geometries. A quantitative universal band gap expression for [110] SiNWs is obtained, which shows a linear dependence of band gap on the surface area to volume ratio (SVR), and it is independent of the cross-sectional geometry. In contrast to the ambiguity in the definition of the SiNW transverse dimension, using of SVR has the advantage to readily predict band gap for SiNWs with any cross-sectional shapes. Our results demonstrate that the SVR is an ideal "gauge" to describe the band gap of SiNWs. © 2008 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nl802807t
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/nl802807t
dc.description.sourcetitleNano Letters
dc.description.volume8
dc.description.issue12
dc.description.page4557-4561
dc.identifier.isiut000261630700081
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