Please use this identifier to cite or link to this item: https://doi.org/10.1002/adfm.201202142
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dc.titleA possible reaction pathway to fabricate a half-metallic wire on a silicon surface
dc.contributor.authorLu, Y.H.
dc.contributor.authorJin, H.
dc.contributor.authorZhu, H.
dc.contributor.authorYang, S.-W.
dc.contributor.authorZhang, C.
dc.contributor.authorJiang, J.Z.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-10-16T09:14:26Z
dc.date.available2014-10-16T09:14:26Z
dc.date.issued2013-05-13
dc.identifier.citationLu, Y.H., Jin, H., Zhu, H., Yang, S.-W., Zhang, C., Jiang, J.Z., Feng, Y.P. (2013-05-13). A possible reaction pathway to fabricate a half-metallic wire on a silicon surface. Advanced Functional Materials 23 (18) : 2233-2238. ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.201202142
dc.identifier.issn1616301X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95669
dc.description.abstractBased on first-principles electronic structure calculations and molecular dynamics simulations, a possible reaction pathway for fabricating half-metallic Mo-borine sandwich molecular wires on a hydrogen-passivated Si(001) surface is presented. The molecular wire is chemically bonded to the silicon surface and is stable up to room temperature. Interestingly, the essential properties of the molecular wire are not significantly affected by the Si substrate. Furthermore, their electronic and magnetic properties are tunable by an external electric field, which allows the molecular wire to function as a molecular switch or a basic component for information storage devices, leading to applications in future molecular electronic and spintronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/adfm.201202142
dc.sourceScopus
dc.subjectborine
dc.subjectmolecular electronics
dc.subjectmolecular wires
dc.subjectsandwich structures
dc.subjectsurface reactions
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/adfm.201202142
dc.description.sourcetitleAdvanced Functional Materials
dc.description.volume23
dc.description.issue18
dc.description.page2233-2238
dc.description.codenAFMDC
dc.identifier.isiut000318502700004
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