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Title: XAFS studies of Al/TiNx films on Si(100) at the Al K- and L3,2-edge
Authors: Zou, Z.
Hu, Y.F.
Sham, T.K.
Huang, H.H. 
Xu, G.Q. 
Seet, C.S.
Chan, L.
Keywords: Al K-edge
Al L3,2-edge
Diffusion barrier
High temperature processing
Issue Date: 1-May-1999
Citation: Zou, Z.,Hu, Y.F.,Sham, T.K.,Huang, H.H.,Xu, G.Q.,Seet, C.S.,Chan, L. (1999-05-01). XAFS studies of Al/TiNx films on Si(100) at the Al K- and L3,2-edge. Journal of Synchrotron Radiation 6 (3) : 524-525. ScholarBank@NUS Repository.
Abstract: The effect of annealing on Al diffusion through a TiNx barrier on a Si(100) wafer has been studied with Al K-edge and L3,2-edge absorption spectroscopy as a function of annealing temperature (400 °C - 600 °C). It is found that there is a noticeable change at high temperatures in the Al K-and L3,2 -edge spectra as the temperature increases. This observation is attributed to the formation of a stable protective surface oxide. Fluorescence yield shows that most of the Al metal remains intact after annealing.
Source Title: Journal of Synchrotron Radiation
ISSN: 09090495
Appears in Collections:Staff Publications

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