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|Title:||XAFS studies of Al/TiNx films on Si(100) at the Al K- and L3,2-edge||Authors:||Zou, Z.
High temperature processing
|Issue Date:||1-May-1999||Citation:||Zou, Z.,Hu, Y.F.,Sham, T.K.,Huang, H.H.,Xu, G.Q.,Seet, C.S.,Chan, L. (1999-05-01). XAFS studies of Al/TiNx films on Si(100) at the Al K- and L3,2-edge. Journal of Synchrotron Radiation 6 (3) : 524-525. ScholarBank@NUS Repository.||Abstract:||The effect of annealing on Al diffusion through a TiNx barrier on a Si(100) wafer has been studied with Al K-edge and L3,2-edge absorption spectroscopy as a function of annealing temperature (400 °C - 600 °C). It is found that there is a noticeable change at high temperatures in the Al K-and L3,2 -edge spectra as the temperature increases. This observation is attributed to the formation of a stable protective surface oxide. Fluorescence yield shows that most of the Al metal remains intact after annealing.||Source Title:||Journal of Synchrotron Radiation||URI:||http://scholarbank.nus.edu.sg/handle/10635/95416||ISSN:||09090495|
|Appears in Collections:||Staff Publications|
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