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|Title:||Wrapping graphene sheets around organic wires for making memory devices||Authors:||Wang, S.
|Issue Date:||22-Aug-2011||Citation:||Wang, S., Manga, K.K., Zhao, M., Bao, Q., Loh, K.P. (2011-08-22). Wrapping graphene sheets around organic wires for making memory devices. Small 7 (16) : 2372-2378. ScholarBank@NUS Repository. https://doi.org/10.1002/smll.201100426||Abstract:||Hybrids of organic semiconductors and graphene can generate a whole new class of materials with enhanced properties. A simple solution-phase route to synthesize a hybrid material made of organic nanowires and graphene oxide (GO) sheets is demonstrated by sonicating tetracene molecules and GO together in diluted fuming nitric acid. The self-assembled tetracene-derived organic wires become encapsulated by GO sheets during the reaction to produce an interconnected, one-dimensional/two-dimensional lamellar film. Memory devices fabricated using the hybrid film as the sandwiched layer between aluminum electrodes exhibit excellent electrical bistability. The charge retention properties are attributed to charge transfer and a charge-trapping/detrapping mechanism operational at the interfaces and isolated matrices of the GO-tetracene hybrid. A simple method to synthesize hybrid materials containing 1D organic wires and 2D graphene oxide (GO) consists of sonicating tetracene and GO together in diluted fuming HNO 3. The GO-organic wire hybrids are used to fabricate memory devices that exhibit electrical bistability. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Source Title:||Small||URI:||http://scholarbank.nus.edu.sg/handle/10635/95414||ISSN:||16136810||DOI:||10.1002/smll.201100426|
|Appears in Collections:||Staff Publications|
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