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dc.titleSubstrate influence on the formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by LPCVD
dc.contributor.authorLuo, L.
dc.contributor.authorZybill, C.E.
dc.contributor.authorAng, H.G.
dc.contributor.authorLim, S.F.
dc.contributor.authorChua, D.H.C.
dc.contributor.authorLin, J.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorTan, K.L.
dc.identifier.citationLuo, L.,Zybill, C.E.,Ang, H.G.,Lim, S.F.,Chua, D.H.C.,Lin, J.,Wee, A.T.S.,Tan, K.L. (1998-07-18). Substrate influence on the formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by LPCVD. Thin Solid Films 325 (1-2) : 87-91. ScholarBank@NUS Repository.
dc.description.abstractIn this work, Fe(SiCl3)2(CO)4 was employed as a single source precursor for the formation of FeSi and FeSi2 films at 350-500°C by low-pressure chemical vapour deposition. The films were deposited in a specially constructed hot-wall reactor either on Pyrex-glass substrates or on a (100)Si surface. On Pyrex, porous polycrystalline (cubic) FeSi films were obtained. The deposition involved a kinetically controlled, selective decomposition reaction of cis-Fe(SiCl3)2(CO)4. On (100)Si substrates, (001) oriented columnar films of orthorhombic β-FeSi2 were formed. This change in film composition and texture is ascribed to an imprint effect of the (100)Si surface on the epilayer. β-FeSi2 can grow on (100)Si with the (010) or (001) direction parallel to the (011) direction of Si with only 1.5 or 2.1% misfit, which allows minimization of interfacial stress and strain. All films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. Furthermore, microhardness and specific resistivity of the films have been measured. © 1998 Elsevier Science S.A. All rights reserved.
dc.subjectFeSi films
dc.subjectFilm composition
dc.subjectFilm formation
dc.subjectLow-pressure chemical vapor deposition
dc.description.sourcetitleThin Solid Films
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