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https://scholarbank.nus.edu.sg/handle/10635/94964
DC Field | Value | |
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dc.title | Substrate influence on the formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by LPCVD | |
dc.contributor.author | Luo, L. | |
dc.contributor.author | Zybill, C.E. | |
dc.contributor.author | Ang, H.G. | |
dc.contributor.author | Lim, S.F. | |
dc.contributor.author | Chua, D.H.C. | |
dc.contributor.author | Lin, J. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Tan, K.L. | |
dc.date.accessioned | 2014-10-16T08:42:12Z | |
dc.date.available | 2014-10-16T08:42:12Z | |
dc.date.issued | 1998-07-18 | |
dc.identifier.citation | Luo, L.,Zybill, C.E.,Ang, H.G.,Lim, S.F.,Chua, D.H.C.,Lin, J.,Wee, A.T.S.,Tan, K.L. (1998-07-18). Substrate influence on the formation of FeSi and FeSi2 films from cis-Fe(SiCl3)2(CO)4 by LPCVD. Thin Solid Films 325 (1-2) : 87-91. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/94964 | |
dc.description.abstract | In this work, Fe(SiCl3)2(CO)4 was employed as a single source precursor for the formation of FeSi and FeSi2 films at 350-500°C by low-pressure chemical vapour deposition. The films were deposited in a specially constructed hot-wall reactor either on Pyrex-glass substrates or on a (100)Si surface. On Pyrex, porous polycrystalline (cubic) FeSi films were obtained. The deposition involved a kinetically controlled, selective decomposition reaction of cis-Fe(SiCl3)2(CO)4. On (100)Si substrates, (001) oriented columnar films of orthorhombic β-FeSi2 were formed. This change in film composition and texture is ascribed to an imprint effect of the (100)Si surface on the epilayer. β-FeSi2 can grow on (100)Si with the (010) or (001) direction parallel to the (011) direction of Si with only 1.5 or 2.1% misfit, which allows minimization of interfacial stress and strain. All films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. Furthermore, microhardness and specific resistivity of the films have been measured. © 1998 Elsevier Science S.A. All rights reserved. | |
dc.source | Scopus | |
dc.subject | FeSi films | |
dc.subject | Film composition | |
dc.subject | Film formation | |
dc.subject | Low-pressure chemical vapor deposition | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 325 | |
dc.description.issue | 1-2 | |
dc.description.page | 87-91 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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