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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1614415
DC FieldValue
dc.titleStudy of negative-bias temperature-instability-induced defects using first-principle approach
dc.contributor.authorSoon, J.M.
dc.contributor.authorLoh, K.P.
dc.contributor.authorTan, S.S.
dc.contributor.authorChen, T.P.
dc.contributor.authorTeo, W.Y.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-16T08:41:51Z
dc.date.available2014-10-16T08:41:51Z
dc.date.issued2003-10-13
dc.identifier.citationSoon, J.M., Loh, K.P., Tan, S.S., Chen, T.P., Teo, W.Y., Chan, L. (2003-10-13). Study of negative-bias temperature-instability-induced defects using first-principle approach. Applied Physics Letters 83 (15) : 3063-3065. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1614415
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/94932
dc.description.abstractA study was performed on negative-bias temperature-instability (NBTI)-induced defects. It was found that the NBTI effect lead to an overall decrease in frontier molecular orbital energy gap at the interface. The results showed that upon formation of a defect, an energy state was created inside the band gap of SiO2.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1614415
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1063/1.1614415
dc.description.sourcetitleApplied Physics Letters
dc.description.volume83
dc.description.issue15
dc.description.page3063-3065
dc.description.codenAPPLA
dc.identifier.isiut000185832400025
Appears in Collections:Staff Publications

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