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|Title:||Study of negative-bias temperature-instability-induced defects using first-principle approach||Authors:||Soon, J.M.
|Issue Date:||13-Oct-2003||Citation:||Soon, J.M., Loh, K.P., Tan, S.S., Chen, T.P., Teo, W.Y., Chan, L. (2003-10-13). Study of negative-bias temperature-instability-induced defects using first-principle approach. Applied Physics Letters 83 (15) : 3063-3065. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1614415||Abstract:||A study was performed on negative-bias temperature-instability (NBTI)-induced defects. It was found that the NBTI effect lead to an overall decrease in frontier molecular orbital energy gap at the interface. The results showed that upon formation of a defect, an energy state was created inside the band gap of SiO2.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/94932||ISSN:||00036951||DOI:||10.1063/1.1614415|
|Appears in Collections:||Staff Publications|
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