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|Title:||Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors||Authors:||Shao, J.
|Issue Date:||Jan-2014||Citation:||Shao, J., Chang, J., Chi, C. (2014-01). Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: Synthesis, characterization, and applications in field-effect transistors. Chemistry - An Asian Journal 9 (1) : 253-260. ScholarBank@NUS Repository. https://doi.org/10.1002/asia.201300895||Abstract:||A series of unsymmetrical naphthalene imide derivatives (1-5) with high electron affinity was synthesized and used in n-channel organic field-effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low-lying LUMO energy levels from -3.90 to -4.15 eV owing to a strong electron-withdrawing character. Solution-processed thin-film OFETs based on 1-4 were measured in both N2 and air. They all showed n-type FET behavior. The liquid-crystalline compounds 1 a, 1 b, and 3 showed good performance owing to the self-healing properties of the film in the liquid-crystal phase. Compound 3 has an electron mobility of up to 0.016 cm 2 V-1 s-1 and current on/off ratios of 10 4-105.Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Source Title:||Chemistry - An Asian Journal||URI:||http://scholarbank.nus.edu.sg/handle/10635/94844||ISSN:||18614728||DOI:||10.1002/asia.201300895|
|Appears in Collections:||Staff Publications|
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