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https://doi.org/10.1021/nn202910t
Title: | Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source | Authors: | Wong, S.L. Huang, H. Wang, Y. Cao, L. Qi, D. Santoso, I. Chen, W. Wee, A.T.S. |
Keywords: | electronic structure fluorine intercalation nanostructures quasi-free-standing grapheme scanning tunneling microscopy and spectroscopy silicon carbide |
Issue Date: | 27-Sep-2011 | Citation: | Wong, S.L., Huang, H., Wang, Y., Cao, L., Qi, D., Santoso, I., Chen, W., Wee, A.T.S. (2011-09-27). Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source. ACS Nano 5 (9) : 7662-7668. ScholarBank@NUS Repository. https://doi.org/10.1021/nn202910t | Abstract: | We demonstrated a novel method to obtain charge neutral quasi-free-standing graphene on SiC (0001) from the buffer layer using fluorine from a molecular source, fluorinated fullerene (C60F48). The intercalated product is stable under ambient conditions and resistant to elevated temperatures of up to 1200 °C. Scanning tunneling microscopy and spectroscopy measurements are performed for the first time on such quasi-free-standing graphene to elucidate changes in the electronic and structural properties of both the graphene and interfacial layer. Novel structures due to a highly localized perturbation caused by the presence of adsorbed fluorine were produced in the intercalation process and investigated. Photoemission spectroscopy is used to confirm these electronic and structural changes. © 2011 American Chemical Society. | Source Title: | ACS Nano | URI: | http://scholarbank.nus.edu.sg/handle/10635/94646 | ISSN: | 19360851 | DOI: | 10.1021/nn202910t |
Appears in Collections: | Staff Publications |
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