Please use this identifier to cite or link to this item:
|Title:||Polarization effects on energy-level alignment at the interfaces of polymer organic semiconductor films||Authors:||Zhao, L.-H.
|Issue Date:||30-Jul-2012||Citation:||Zhao, L.-H., Png, R.-Q., Chiam, C.C.H., Guo, H., Zhuo, J.-M., Chua, L.-L., Wee, A.T.S., Ho, P.K.H. (2012-07-30). Polarization effects on energy-level alignment at the interfaces of polymer organic semiconductor films. Applied Physics Letters 101 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4734502||Abstract:||The thickness-dependent evolutions of the Fermi level E F and ionization potential I p of ultrathin films of regioregular poly(3-hexylthiophene) and poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b] thiophene], deposited as edge-on π-stacked lamellae on gold and on p-doped poly(3,4-ethylenedioxythiophene) electrodes, have been measured by ultraviolet photoemission spectroscopy. The I p increases by 0.3 eV on going from a monolayer film to a few-nanometer-thick film. Correspondingly, the E F pinning depth increases from 0.2 eV to 0.5 eV. This valence band bending which occurs for a constant vacuum level can be quantitatively modeled by microelectrostatic self-consistent polarization field calculations that incorporate both substrate and organic semiconductor film effects. The E F pinning to the first monolayer is relatively shallow. © 2012 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/94545||ISSN:||00036951||DOI:||10.1063/1.4734502|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 17, 2020
WEB OF SCIENCETM
checked on Jan 10, 2020
checked on Dec 28, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.