Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.83.235418
Title: Observation of a surface alloying-to-dealloying transition during growth of Bi on Ag(111)
Authors: Zhang, K.H.L.
McLeod, I.M.
Lu, Y.H. 
Dhanak, V.R.
Matilainen, A.
Lahti, M.
Pussi, K.
Egdell, R.G.
Wang, X.-S. 
Wee, A.T.S. 
Chen, W. 
Issue Date: 14-Jun-2011
Citation: Zhang, K.H.L., McLeod, I.M., Lu, Y.H., Dhanak, V.R., Matilainen, A., Lahti, M., Pussi, K., Egdell, R.G., Wang, X.-S., Wee, A.T.S., Chen, W. (2011-06-14). Observation of a surface alloying-to-dealloying transition during growth of Bi on Ag(111). Physical Review B - Condensed Matter and Materials Physics 83 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.83.235418
Abstract: The atomic structures that develop as a function of coverage during deposition of Bi on Ag(111) have been studied using low-temperature scanning tunneling microscopy, low-energy electron diffraction, and ab initio calculations. The growth process involves two sequential stages. At low coverage, Bi atoms are incorporated into the topmost layer of Ag(111), resulting in the formation of an Ag2Bi alloy confined to the surface and ordered (√3×√3)R30°Ag2Bi islands supported on Ag(111). This mode of accommodation of Bi was found to be energetically favorable based on ab initio total-energy calculations. At coverage above a critical value of 0.55 monolayers, the Ag2Bi alloy phase gradually converts into an ordered Bi (p×√3) overlayer structure supported on Ag(111). We postulate that the dealloying transition is likely driven by compressive strain induced by incorporation of large-size Bi atoms into Ag at a high coverage and the subsequent lack of miscibility of Ag and Bi bulk phases. After completion of the dealloying process, Bi(110) thin films can be grown epitaxially on top of Ag(111) with a chemically abrupt interface. © 2011 American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/94409
ISSN: 10980121
DOI: 10.1103/PhysRevB.83.235418
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