Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2010.09.048
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dc.titleInteraction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface
dc.contributor.authorZhang, Y.P.
dc.contributor.authorYong, K.S.
dc.contributor.authorXu, G.Q.
dc.contributor.authorGao, X.Y.
dc.contributor.authorWang, X.-S.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T08:31:42Z
dc.date.available2014-10-16T08:31:42Z
dc.date.issued2011-01-01
dc.identifier.citationZhang, Y.P., Yong, K.S., Xu, G.Q., Gao, X.Y., Wang, X.-S., Wee, A.T.S. (2011-01-01). Interaction of copper with sulfur on the sulfur-terminated Si(1 1 1)-(7 × 7) surface. Applied Surface Science 257 (6) : 2038-2041. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2010.09.048
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/94065
dc.description.abstractThe adsorption of S2 on the Si(1 1 1)-(7 × 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S2 at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 × 7) surface. Excessive sulfur forms Sn species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu-S bonds. Upon annealing the sample at 300 °C, CuSx nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface. © 2010 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2010.09.048
dc.sourceScopus
dc.subjectCopper
dc.subjectNanostructures
dc.subjectPhotoemission spectroscopy
dc.subjectScanning tunneling microscopy
dc.subjectSilicon
dc.subjectSulfur
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1016/j.apsusc.2010.09.048
dc.description.sourcetitleApplied Surface Science
dc.description.volume257
dc.description.issue6
dc.description.page2038-2041
dc.description.codenASUSE
dc.identifier.isiut000285408700039
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