Please use this identifier to cite or link to this item: https://doi.org/10.1021/la4033282
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dc.titleFabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing
dc.contributor.authorChen, Z.
dc.contributor.authorLi, W.
dc.contributor.authorLi, R.
dc.contributor.authorZhang, Y.
dc.contributor.authorXu, G.
dc.contributor.authorCheng, H.
dc.date.accessioned2014-10-16T08:28:26Z
dc.date.available2014-10-16T08:28:26Z
dc.date.issued2013-11-12
dc.identifier.citationChen, Z., Li, W., Li, R., Zhang, Y., Xu, G., Cheng, H. (2013-11-12). Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing. Langmuir 29 (45) : 13836-13842. ScholarBank@NUS Repository. https://doi.org/10.1021/la4033282
dc.identifier.issn07437463
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93789
dc.description.abstractDeposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium-tin oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10-4 Ω·cm) with the highest figure of merit (1.19 × 10 -2 Ω-1) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications. © 2013 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/la4033282
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1021/la4033282
dc.description.sourcetitleLangmuir
dc.description.volume29
dc.description.issue45
dc.description.page13836-13842
dc.description.codenLANGD
dc.identifier.isiut000327044600020
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