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|Title:||Electrochemical deposition of copper on patterned Cu/Ta(N)/SiO2 surfaces for super filling of sub-micron features||Authors:||Li, W.H.
Electrochemical deposition of Cu
TaN barrier and integrated circuit
|Issue Date:||Dec-2001||Citation:||Li, W.H., Ye, J.H., Li, S.F.Y. (2001-12). Electrochemical deposition of copper on patterned Cu/Ta(N)/SiO2 surfaces for super filling of sub-micron features. Journal of Applied Electrochemistry 31 (12) : 1395-1397. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1013872107905||Abstract:||In this study, copper electrodeposition on patterned Cu/Ta(N)/SiO2 surfaces for filling sub-micron vias with a width of 300 nm and an aspect ratio of 3.4:1 was demonstrated. SEM and XPS measurements were used to characterize the deposition profile of the electrodeposited copper film and the impurities in the film. It was possible to fill the vias without voids or seams under optimized electrodeposition conditions with electrodeposited Cu of 2 Ω cm resistivity.||Source Title:||Journal of Applied Electrochemistry||URI:||http://scholarbank.nus.edu.sg/handle/10635/93698||ISSN:||0021891X||DOI:||10.1023/A:1013872107905|
|Appears in Collections:||Staff Publications|
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