Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4728121
Title: Effective work functions for the evaporated metal/organic semiconductor contacts from in-situ diode flatband potential measurements
Authors: Zhou, M. 
Png, R.-Q. 
Khong, S.-H.
Sivaramakrishnan, S. 
Zhao, L.-H.
Chua, L.-L. 
Friend, R.H. 
Ho, P.K.H. 
Issue Date: 2-Jul-2012
Citation: Zhou, M., Png, R.-Q., Khong, S.-H., Sivaramakrishnan, S., Zhao, L.-H., Chua, L.-L., Friend, R.H., Ho, P.K.H. (2012-07-02). Effective work functions for the evaporated metal/organic semiconductor contacts from in-situ diode flatband potential measurements. Applied Physics Letters 101 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4728121
Abstract: The diode built-in potentials (V bi) of several polymer organic semiconductor (OSC) thin films [(2,5-dialkoxy-substituted poly(p- phenylenevinylene), poly(9,9-dialkylfluorene), poly(9,9-dialkylfluorene-alt- phenylene(N-phenyl)iminophenylene), and poly(9,9-dialkylfluorene-alt- benzothiadiazole)] sandwiched between p-doped poly(3,4-ethylenedioxythiophene) (PEDT:PSSH) and evaporated metal contacts have been measured by bias-dependent electromodulated absorption (EA) spectroscopy of the Stark-shifted π-π band. From these values and the vacuum-level offsets at the PEDT:PSSH contacts evaluated by sub-gap EA spectroscopy, the following effective work functions for the buried evaporated metal contacts have been obtained: Al 3.4 ± 0.1, Ag 3.7 ± 0.1, Au 4.4 ± 0.1, and Ca 2.4 ± 0.1 eV. These work functions are smaller than those of the clean metal surfaces by up to 0.8 eV, and are substantially independent of the OSC in the absence of charge transfer. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/93660
ISSN: 00036951
DOI: 10.1063/1.4728121
Appears in Collections:Staff Publications

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