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|Title:||Dependency of the tunneling decay coefficient in molecular tunneling junctions on the topography of the bottom electrodes||Authors:||Yuan, L.
tunneling decay constant
|Issue Date:||24-Mar-2014||Citation:||Yuan, L., Jiang, L., Zhang, B., Nijhuis, C.A. (2014-03-24). Dependency of the tunneling decay coefficient in molecular tunneling junctions on the topography of the bottom electrodes. Angewandte Chemie - International Edition 53 (13) : 3377-3381. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201309506||Abstract:||A controversy in molecular electronics is the unexplained large spread in values of the tunneling decay coefficient β in tunneling junctions with self-assembled monolayers of n-alkanethiolates (SCn). We show control of the β value over the range 0.4-1.0 nC -1 in junctions by changing the topography of the bottom electrodes that support the SAMs. Very low β values (0.4-0.5 nC -1) are obtained for rough surfaces with large areas of exposed grain boundaries, while β=1.0 nC -1 for smooth surfaces with small areas of exposed grain boundaries. Taking the rough with the smooth: The tunneling decay coefficient β in tunneling junctions with self-assembled n-alkanethiolate monolayers can be controlled by changing the topography of the bottom electrodes. Rough surfaces with large areas of exposed grain boundaries give β=0.4-0.5 nC -1, while smooth surfaces with small areas of exposed grain boundaries give β=1.0 nC -1 (see picture). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Source Title:||Angewandte Chemie - International Edition||URI:||http://scholarbank.nus.edu.sg/handle/10635/93530||ISSN:||15213773||DOI:||10.1002/anie.201309506|
|Appears in Collections:||Staff Publications|
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