Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/93512
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dc.titleCycloaddition chemistry of thiophene on the silicon (111)-7×7 surface
dc.contributor.authorCao, Y.
dc.contributor.authorYong, K.S.
dc.contributor.authorWang, Z.H.
dc.contributor.authorDeng, J.F.
dc.contributor.authorLai, Y.H.
dc.contributor.authorXu, G.Q.
dc.date.accessioned2014-10-16T08:25:10Z
dc.date.available2014-10-16T08:25:10Z
dc.date.issued2001-08-15
dc.identifier.citationCao, Y., Yong, K.S., Wang, Z.H., Deng, J.F., Lai, Y.H., Xu, G.Q. (2001-08-15). Cycloaddition chemistry of thiophene on the silicon (111)-7×7 surface. Journal of Chemical Physics 115 (7) : 3287-3296. ScholarBank@NUS Repository.
dc.identifier.issn00219606
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93512
dc.description.abstractCycloaddition reactions of the heterocyclic thiophene molecule on silicon surface was studied. The binding configuration, thermal stability and absorption sites of thiophene molecules on silicon were obtained using a combination of thermal desorption spectroscopy (TDS), high resolution electron energy loss spectroscopy (HREELS), electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM) and semiempirical calculations. Covalent binding of thiophene molecules onto the silicon surface was readily achieved by vacuum vapor adsorption. Preferential chemisorption of thiophene molecules on the faulted subunits and the center adatoms was also observed.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1386435
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.sourcetitleJournal of Chemical Physics
dc.description.volume115
dc.description.issue7
dc.description.page3287-3296
dc.description.codenJCPSA
dc.identifier.isiut000170278200045
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