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|Title:||Alternative NH4F/HCl solution for ultraclean Si(001) surface||Authors:||Bok, T.H.
|Issue Date:||Sep-2000||Citation:||Bok, T.H., Ye, J.H., Li, S.F.Y. (2000-09). Alternative NH4F/HCl solution for ultraclean Si(001) surface. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (5) : 2542-2548. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1286201||Abstract:||Wet chemical cleaning of silicon was investigated by scanning tunneling microscopy and total reflection X-ray fluorescence spectrometry. Metallic impurities on silicon surface were found to occur via electrochemical reaction between metal ions and silicon substrate as the redox potentials of the metals were more positive than Si/SiO2. Complex reactions between chloride and metal ions resulted in less metal deposition on silicon surfaces.||Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/93071||ISSN:||07342101||DOI:||10.1116/1.1286201|
|Appears in Collections:||Staff Publications|
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