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|Title:||A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films||Authors:||Han, M.Y.
|Issue Date:||30-Jun-1997||Citation:||Han, M.Y.,Huang, W. (1997-06-30). A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films. Materials Chemistry and Physics 49 (2) : 179-183. ScholarBank@NUS Repository.||Abstract:||A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)2Ni(DMIT)2. It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.||Source Title:||Materials Chemistry and Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/92996||ISSN:||02540584|
|Appears in Collections:||Staff Publications|
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