Please use this identifier to cite or link to this item:
|Title:||ORIENTING Si CRYSTALS WITH PULSED-LASER-INDUCED CRACKS.||Authors:||Fong, H.S.||Issue Date:||Mar-1986||Citation:||Fong, H.S. (1986-03). ORIENTING Si CRYSTALS WITH PULSED-LASER-INDUCED CRACKS.. Journal of Physics E: Scientific Instruments 19 (3) : 189-190. ScholarBank@NUS Repository.||Abstract:||Recently, H. S. Tan et al described a pulsed-laser technique for the easy determination of the orientation of Si wafers and ingots. The technique produced cracks on a small area on the surface of the Si with the cracks being left brace lll right brace traces, i. e. , they delineated the intersections of left brace lll right brace planes of the Si with its surface. The authors stated; 'In principle, the deviation of the azimuthal orientation from the left bracket 100 right bracket and left bracket lll right bracket directions may be determined by measuring the deviation of the crack intersecting angles from 90 degree and 60 degree respectively'. How this principle may or may not be put into practice is the subject of this study. Charts for reading off orientations from crack directions on a Si crystal surface near (lll) and (100) are produced.||Source Title:||Journal of Physics E: Scientific Instruments||URI:||http://scholarbank.nus.edu.sg/handle/10635/92763||ISSN:||00223735|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 30, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.