Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812553
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dc.titleThe statistical distribution of percolation current for soft breakdown in ultrathin gate oxide
dc.contributor.authorLin, W.H.
dc.contributor.authorPey, K.L.
dc.contributor.authorDong, Z.
dc.contributor.authorChooi, S.Y.M.
dc.contributor.authorAng, C.H.
dc.contributor.authorZheng, J.Z.
dc.date.accessioned2014-10-09T10:02:44Z
dc.date.available2014-10-09T10:02:44Z
dc.date.issued2003-05
dc.identifier.citationLin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.M., Ang, C.H., Zheng, J.Z. (2003-05). The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide. IEEE Electron Device Letters 24 (5) : 336-338. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812553
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/92430
dc.description.abstractSoft breakdown in ultrathin gate oxide has been studied using constant voltage stressing. The behavior of current increments resulting from a number of soft breakdown events has been characterized by statistical distribution. It is shown that the distribution of the current increment follows Weibull distribution rather than Log Normal distribution. The newly established Weibull slope is shown to be independent of the stressed voltage in the range investigated between 4.5 and 5.1 V. The temperature effect study shows that the Weibull slope reduces with increasing testing temperature. Furthermore, a strong dependence of the Weibull slope on the oxide thickness has been found. These observations can be well explained by geometrical configurations of percolation path.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.812553
dc.sourceScopus
dc.subjectPercolation path
dc.subjectSoft breakdown
dc.subjectUltrathin gate oxide
dc.subjectWeibull distribution
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentCHEMICAL & ENVIRONMENTAL ENGINEERING
dc.description.doi10.1109/LED.2003.812553
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue5
dc.description.page336-338
dc.description.codenEDLED
dc.identifier.isiut000184064600017
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