Please use this identifier to cite or link to this item:
|Title:||Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication||Authors:||Sin, C.-Y.
|Issue Date:||Sep-2002||Citation:||Sin, C.-Y., Chen, B.-H., Loh, W.L., Yu, J., Yelehanka, P., See, A., Chan, L. (2002-09). Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5) : 1974-1981. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1503791||Abstract:||Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/92306||ISSN:||10711023||DOI:||10.1116/1.1503791|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 17, 2019
WEB OF SCIENCETM
checked on Apr 10, 2019
checked on Apr 20, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.