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Title: Effect of halogen in high-density oxygen plasmas on photoresist trimming
Authors: Sin, C.-Y.
Chen, B.-H. 
Loh, W.L.
Yu, J.
Yelehanka, P.
See, A.
Chan, L.
Keywords: Activation energy
ICP etcher
Oxygen plasma
Photoresist trimming
Resist profiles
Trim rate
Issue Date: Jul-2004
Citation: Sin, C.-Y., Chen, B.-H., Loh, W.L., Yu, J., Yelehanka, P., See, A., Chan, L. (2004-07). Effect of halogen in high-density oxygen plasmas on photoresist trimming. AIChE Journal 50 (7) : 1578-1588. ScholarBank@NUS Repository.
Abstract: Effects of halogens, CF4, Cl2, or HBr, on the photoresist trimming in high-density oxygen plasmas for sub-0.1-μm device fabrication were studied in an inductively coupled plasma (ICP) etcher. The trim rates were measured as a function of halogen gas percentages. The activation energy and the resulting resist profiles were investigated as well, showing that the CF4/O2 gives the highest trim rate, followed by HBr/O2 and then Cl2/O2 at the same amount of additive gas in the mixture. Effects of different plasma chemistry on the chemical constituents of the resist sidewall films were also examined with the angle-resolved X-ray photo-electron spectroscopy (XPS). XPS analysis reveals that all halogen gases are useful for resist sidewall protection because of the passivation by the halogen-containing polymer. The effects of halogen addition include the reaction enhancement, reaction-site competition between oxygen and halogen, changes in the plasma gas chemistry, and the resist passivation. © 2004 American Institute of Chemical Engineers.
Source Title: AIChE Journal
ISSN: 00011541
DOI: 10.1002/aic.10145
Appears in Collections:Staff Publications

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