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|Title:||Effect of halogen in high-density oxygen plasmas on photoresist trimming||Authors:||Sin, C.-Y.
|Issue Date:||Jul-2004||Citation:||Sin, C.-Y., Chen, B.-H., Loh, W.L., Yu, J., Yelehanka, P., See, A., Chan, L. (2004-07). Effect of halogen in high-density oxygen plasmas on photoresist trimming. AIChE Journal 50 (7) : 1578-1588. ScholarBank@NUS Repository. https://doi.org/10.1002/aic.10145||Abstract:||Effects of halogens, CF4, Cl2, or HBr, on the photoresist trimming in high-density oxygen plasmas for sub-0.1-μm device fabrication were studied in an inductively coupled plasma (ICP) etcher. The trim rates were measured as a function of halogen gas percentages. The activation energy and the resulting resist profiles were investigated as well, showing that the CF4/O2 gives the highest trim rate, followed by HBr/O2 and then Cl2/O2 at the same amount of additive gas in the mixture. Effects of different plasma chemistry on the chemical constituents of the resist sidewall films were also examined with the angle-resolved X-ray photo-electron spectroscopy (XPS). XPS analysis reveals that all halogen gases are useful for resist sidewall protection because of the passivation by the halogen-containing polymer. The effects of halogen addition include the reaction enhancement, reaction-site competition between oxygen and halogen, changes in the plasma gas chemistry, and the resist passivation. © 2004 American Institute of Chemical Engineers.||Source Title:||AIChE Journal||URI:||http://scholarbank.nus.edu.sg/handle/10635/91937||ISSN:||00011541||DOI:||10.1002/aic.10145|
|Appears in Collections:||Staff Publications|
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