Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/91670
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dc.titleRectangular vacancy island formation and self-depletion in Czochralski-grown PbMoO4 single crystal during heat treatment
dc.contributor.authorZeng, H.C.
dc.date.accessioned2014-10-09T08:20:50Z
dc.date.available2014-10-09T08:20:50Z
dc.date.issued1996-03
dc.identifier.citationZeng, H.C. (1996-03). Rectangular vacancy island formation and self-depletion in Czochralski-grown PbMoO4 single crystal during heat treatment. Journal of Crystal Growth 160 (1-2) : 119-128. ScholarBank@NUS Repository.
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/91670
dc.description.abstractSingle crystal samples of PbMoO4 with a 〈100〉 orientation have been investigated by DTA, chemical etching, and thermal treatments at 950°C for various annealing times. Surface morphologies of chemically and thermally etched {100} surfaces have been studied in detail in respect of microstructure, etch pit dimension, defect type and density. It is found that both chemical and thermal etching techniques reveal a similar radial defect-distribution pattern on the {100} surfaces while DTA shows a small compositional variation along the radial and axial directions. The correlation between two types of etch pits has been addressed. For thermally etched samples, a kinetic study on the rectangular vacancy island (thermal etch pit) formation and self-depletion has been presented. Based on the current work, the formation rate of the vacancy islands can be expressed as D2 x-D2 0 = k0t1.32exp(-Ea/RT). Mechanisms regarding the vacancy island formation and self-depletion upon the heat treatment have also been proposed. The current study on the post-growth heat treatment has also identified key processing parameters to improve overall crystal quality.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMICAL ENGINEERING
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume160
dc.description.issue1-2
dc.description.page119-128
dc.description.codenJCRGA
dc.identifier.isiutNOT_IN_WOS
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