Please use this identifier to cite or link to this item:
DC FieldValue
dc.titleRectangular vacancy island formation and self-depletion in Czochralski-grown PbMoO4 single crystal during heat treatment
dc.contributor.authorZeng, H.C.
dc.identifier.citationZeng, H.C. (1996-03). Rectangular vacancy island formation and self-depletion in Czochralski-grown PbMoO4 single crystal during heat treatment. Journal of Crystal Growth 160 (1-2) : 119-128. ScholarBank@NUS Repository.
dc.description.abstractSingle crystal samples of PbMoO4 with a 〈100〉 orientation have been investigated by DTA, chemical etching, and thermal treatments at 950°C for various annealing times. Surface morphologies of chemically and thermally etched {100} surfaces have been studied in detail in respect of microstructure, etch pit dimension, defect type and density. It is found that both chemical and thermal etching techniques reveal a similar radial defect-distribution pattern on the {100} surfaces while DTA shows a small compositional variation along the radial and axial directions. The correlation between two types of etch pits has been addressed. For thermally etched samples, a kinetic study on the rectangular vacancy island (thermal etch pit) formation and self-depletion has been presented. Based on the current work, the formation rate of the vacancy islands can be expressed as D2 x-D2 0 = k0t1.32exp(-Ea/RT). Mechanisms regarding the vacancy island formation and self-depletion upon the heat treatment have also been proposed. The current study on the post-growth heat treatment has also identified key processing parameters to improve overall crystal quality.
dc.contributor.departmentCHEMICAL ENGINEERING
dc.description.sourcetitleJournal of Crystal Growth
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on May 30, 2020

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.