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|Title:||Photoconductivity in poly[[o-(trimethylsilyl)phenyl]acetylene]||Authors:||Kang, E.T.
|Issue Date:||Jul-1989||Citation:||Kang, E.T.,Neoh, K.G.,Masuda, T.,Higashimura, T.,Yamamoto, M. (1989-07). Photoconductivity in poly[[o-(trimethylsilyl)phenyl]acetylene]. Polymer 30 (7) : 1328-1331. ScholarBank@NUS Repository.||Abstract:||Steady-state photoconductivity was studied in thin films of poly[[o-(trimethylsilyl)phenyl]acetylene], or poly(o-Me3SiPA) sandwiched between SnO2 and metal electrodes. Both the dark current density (Jd) and photocurrent density (Jph) depend superlinearly on the applied electric field. Jph also shows a superlinear dependence on light intensity. However, Jd and Jph are only weak functions of temperature at temperatures below room temperature. We conclude that the photoconductivity in poly(o-Me3SiPA) arises mainly from trap-modulated carrier photoemission from electrodes and the polymer is capable of effective transport of holes. © 1989.||Source Title:||Polymer||URI:||http://scholarbank.nus.edu.sg/handle/10635/91629||ISSN:||00323861|
|Appears in Collections:||Staff Publications|
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