Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/91504
Title: High-surface-area SnO2: A novel semiconductor-oxide gas sensor
Authors: Li, G.-J. 
Kawi, S. 
Keywords: H2 gas sensor
High surface area
Semiconductor oxide
SnO2
Surfactant
Issue Date: Feb-1998
Citation: Li, G.-J.,Kawi, S. (1998-02). High-surface-area SnO2: A novel semiconductor-oxide gas sensor. Materials Letters 34 (1-2) : 99-102. ScholarBank@NUS Repository.
Abstract: High surface area SnO2 sensor materials were systematically synthesized by a surfactant incorporating method. After calcination at 723 K, a high BET surface area of 156.8 m2/g was obtained. The sensing properties of the high surface area SnO2 material were studied using H2 as the probing gas. It is found that a linear relationship exists between sensor surface area and its sensitivity to H2. © 1998 Elsevier Science B.V.
Source Title: Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/91504
ISSN: 0167577X
Appears in Collections:Staff Publications

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