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|Title:||Conductivity switching and electronic memory effect in polymers with pendant azobenzene chromophores||Authors:||Lim, S.L.
|Issue Date:||28-Jan-2009||Citation:||Lim, S.L., Li, N.-J., Lu, J.-M., Ling, Q.-D., Zhu, C.X., Kang, E.-T., Neoh, K.G. (2009-01-28). Conductivity switching and electronic memory effect in polymers with pendant azobenzene chromophores. ACS Applied Materials and Interfaces 1 (1) : 60-71. ScholarBank@NUS Repository. https://doi.org/10.1021/am800001e||Abstract:||Electronic memory devices having the indium-tin oxide/polymer/Al sandwich structure were fabricated from polymers containing pendant azobenzene chromophores in donor-acceptor structures. The reversibility, or rewritability, of the high-conductivity (ON) state was found to be dependant on the terminal moiety of the azobenzene chromophore. While the polymers with electron-accepting terminal moieties (-Br or -NO2) in the pendant azobenzene exhibit write-once, read-many-times (WORM) type memory behavior, those with electron-donating terminal moieties (-OCH3) exihibit rewritable (FLASH) memory behavior. The WORM memory devices have low switching ("write") voltages below -2 V and high ON/OFF current ratios of about 104-106. The polarity of the "write" voltage can be reversed by using an electrode with a higher work function than Al, thus excluding metallic filamentary conduction as a cause of the bistable switching phenomenon. The FLASH memory devices have low "write" and "erase" voltages of about -1.7 to -1.8 V and 2.0 to 2.2 V, respectively, and ON/OFF current ratios of about 103-104. The electrical bistability observed can be attributed to charge trapping at the azobenzene chromophores, resulting in the charge-separated, high-conductivity state. The proposed mechanism is supported experimentally by a red shift and peak broadening in the UV-visible absorption spectra of the polymer films resulting from the OFF-to-ON electrical transition. © 2008 American Chemical Society.||Source Title:||ACS Applied Materials and Interfaces||URI:||http://scholarbank.nus.edu.sg/handle/10635/88682||ISSN:||19448244||DOI:||10.1021/am800001e|
|Appears in Collections:||Staff Publications|
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