Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssr.201004473
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dc.titleThin film bilayers of multiferroic bismuth ferrite on Pt-Si substrate
dc.contributor.authorWu, J.
dc.contributor.authorWang, J.
dc.contributor.authorXiao, D.
dc.contributor.authorZhu, J.
dc.date.accessioned2014-10-07T09:57:07Z
dc.date.available2014-10-07T09:57:07Z
dc.date.issued2011-02
dc.identifier.citationWu, J., Wang, J., Xiao, D., Zhu, J. (2011-02). Thin film bilayers of multiferroic bismuth ferrite on Pt-Si substrate. Physica Status Solidi - Rapid Research Letters 5 (2) : 83-85. ScholarBank@NUS Repository. https://doi.org/10.1002/pssr.201004473
dc.identifier.issn18626254
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86983
dc.description.abstractA multiferroics/multiferroics BiFeO3/Bi0.90La0.10Fe0.90Zn0.10O3 (BFO/BLFZO) bilayer was deposited on Pt/TiO2/SiO2/Si substrates by radio frequency sputtering. The BLFZO layer strongly affects the phase purity, orientation growth, and leakage current of BFO layer. The bilayered capacitor exhibits a high dielectric permittivity of ∼162 and an improved magnetic behavior of 2Ms ∼ 34.6 emu/cm3, together with an excellent fatigue endurance. A remanent polarization of 2Pr ∼ 116.2 μC/cm2 for the bilayered capacitor is better than those of reported BFO bilayers. The impedance study indicates that lower freely mobile charges are responsible for the improved electrical behavior of the BFO/BLFZO bilayer. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pssr.201004473
dc.sourceScopus
dc.subjectBiFeO3
dc.subjectImpedance
dc.subjectMultiferroics
dc.subjectQuartz substrate
dc.subjectThin films
dc.typeOthers
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1002/pssr.201004473
dc.description.sourcetitlePhysica Status Solidi - Rapid Research Letters
dc.description.volume5
dc.description.issue2
dc.description.page83-85
dc.identifier.isiut000288178300013
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