Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3535427
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dc.titleRoom temperature ferromagnetism in N-doped rutile TiO2 films
dc.contributor.authorBao, N.N.
dc.contributor.authorFan, H.M.
dc.contributor.authorDing, J.
dc.contributor.authorYi, J.B.
dc.date.accessioned2014-10-07T09:56:45Z
dc.date.available2014-10-07T09:56:45Z
dc.date.issued2011-04-01
dc.identifier.citationBao, N.N., Fan, H.M., Ding, J., Yi, J.B. (2011-04-01). Room temperature ferromagnetism in N-doped rutile TiO2 films. Journal of Applied Physics 109 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3535427
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86954
dc.description.abstractRoom temperature ferromagnetism has been experimentally observed in TiO2:N films prepared by pulse laser deposition under N2O atmosphere. The ferromagnetism appears when the N2O partial pressure is higher than 10-5 Torr. XPS study has revealed that N substitutes O at the partial pressure of 10-5 Torr, whereas additional N atoms occupy interstitial sites besides substituting N at higher N2O partial pressures. Our study indicates that the origin of the ferromagnetism is the O substitution with N. Each substituted N has a magnetic moment of approximately 0.9 B. The substitution of O also resulted in p-type behavior, accompanied with magnetoresistance and anomalous Hall effect. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3535427
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.3535427
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume109
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000289952100079
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