Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physb.2012.03.072
Title: Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode
Authors: Iwan, S.
Bambang, S.
Zhao, J.L.
Tan, S.T.
Fan, H.M. 
Sun, L.
Zhang, S.
Ryu, H.H.
Sun, X.W.
Keywords: Electron impact excitation
n-ZnO:Er/p-Si heterojunctions
Photoluminescence
Room temperature
USP
ZnO:Er
Issue Date: 15-Jul-2012
Citation: Iwan, S., Bambang, S., Zhao, J.L., Tan, S.T., Fan, H.M., Sun, L., Zhang, S., Ryu, H.H., Sun, X.W. (2012-07-15). Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode. Physica B: Condensed Matter 407 (14) : 2721-2724. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physb.2012.03.072
Abstract: Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films. © 2012 Elsevier B.V. All rights reserved.
Source Title: Physica B: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/86892
ISSN: 09214526
DOI: 10.1016/j.physb.2012.03.072
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