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|Title:||Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode||Authors:||Iwan, S.
|Keywords:||Electron impact excitation
|Issue Date:||15-Jul-2012||Citation:||Iwan, S., Bambang, S., Zhao, J.L., Tan, S.T., Fan, H.M., Sun, L., Zhang, S., Ryu, H.H., Sun, X.W. (2012-07-15). Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode. Physica B: Condensed Matter 407 (14) : 2721-2724. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physb.2012.03.072||Abstract:||Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er 3 ions doped in ZnO films. © 2012 Elsevier B.V. All rights reserved.||Source Title:||Physica B: Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/86892||ISSN:||09214526||DOI:||10.1016/j.physb.2012.03.072|
|Appears in Collections:||Staff Publications|
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