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|Title:||White electroluminescence from ITO/porous silicon junctions||Authors:||Xie, Z.
|Issue Date:||Feb-2013||Citation:||Xie, Z., Blackwood, D.J. (2013-02). White electroluminescence from ITO/porous silicon junctions. Journal of Luminescence 134 : 67-70. ScholarBank@NUS Repository.||Abstract:||A DC magnetron is used to sputter highly conductive ITO on the surface of porous silicon to form LEDs that not only emit the usual red-orange light in one bias direction, but stable white light when biased in the opposite direction. The direction of the bias required for white light emission depends on whether p- or n-type silicon is used. The white light is clearly visible to the naked eye and stable for >2 h of continuous operation. The likely source of the white light emission is from the intra- or inter-band transitions of hot carriers generated in an avalanche process. © 2012 Elsevier B.V. All rights reserved.||Source Title:||Journal of Luminescence||URI:||http://scholarbank.nus.edu.sg/handle/10635/86845||ISSN:||00222313|
|Appears in Collections:||Staff Publications|
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