Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/86671
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dc.titleProperties of ZnO influenced by P concentration
dc.contributor.authorHu, G.
dc.contributor.authorGong, H.
dc.contributor.authorWang, Y.
dc.contributor.authorLiu, H.F.
dc.date.accessioned2014-10-07T09:53:27Z
dc.date.available2014-10-07T09:53:27Z
dc.date.issued2009
dc.identifier.citationHu, G., Gong, H., Wang, Y., Liu, H.F. (2009). Properties of ZnO influenced by P concentration. Journal of Applied Physics 106 (12) : -. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86671
dc.description.abstractThe properties of ZnO were found to be influenced by P concentration. Upon increasing P concentration in ZnO, up to small values of less than 0.1 at. %, the as-deposited ZnO is found to undergo a change from n-type to p-type character. The change is accompanied by a redshift of the optical band gap energy and an increase in the lattice constants of ZnO, which can be attributed to substitution of O by P. A further increase in P concentration, up to 0.4 at. %, leads to a decrease in both lattice constants and energy band gaps of the samples, compared to those of undoped ZnO. Additionally, the electrical conductivity of samples stopped increasing for high P concentrations and became an insulator at P=0.4 at. %. Possible mechanisms for these effects were investigated and discussed. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3271354
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume106
dc.description.issue12
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000273216500030
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