Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/86670
DC Field | Value | |
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dc.title | Properties of p-type and n-type ZnO influenced by P concentration | |
dc.contributor.author | Hu, G. | |
dc.contributor.author | Gong, H. | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Wu, P. | |
dc.date.accessioned | 2014-10-07T09:53:26Z | |
dc.date.available | 2014-10-07T09:53:26Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). Properties of p-type and n-type ZnO influenced by P concentration. Applied Physics Letters 89 (25) : -. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/86670 | |
dc.description.abstract | The electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n type to p type. At the same time, a redshift of the band gap energy is observed by using the photoluminescence spectroscopy and UV-visible spectrophotometer. X-ray diffraction results show that lattice spacings of ZnO increase with P concentration, which indicates that P substitutes O, and this leads to a lattice spacing increase and an optical band gap energy decrease. © 2006 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2408652 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 89 | |
dc.description.issue | 25 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000243415200002 | |
Appears in Collections: | Staff Publications |
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