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Please use this identifier to cite or link to this item: https://doi.org/10.1007/s11051-008-9551-4
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dc.titlePhotoluminescence of InAs quantum dots embedded in graded InGaAs barriers
dc.contributor.authorYin, Z.
dc.contributor.authorTang, X.
dc.contributor.authorZhang, J.
dc.contributor.authorZhao, J.
dc.contributor.authorDeny, S.
dc.contributor.authorGong, H.
dc.date.accessioned2014-10-07T09:53:11Z
dc.date.available2014-10-07T09:53:11Z
dc.date.issued2009-11
dc.identifier.citationYin, Z., Tang, X., Zhang, J., Zhao, J., Deny, S., Gong, H. (2009-11). Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers. Journal of Nanoparticle Research 11 (8) : 1947-1955. ScholarBank@NUS Repository. https://doi.org/10.1007/s11051-008-9551-4
dc.identifier.issn13880764
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86647
dc.description.abstractThe effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded In xGa1-xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded In xGa1-xAs top barrier layer of the structure. The QDs' ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs' PL emission is sensitive to the QD size. © 2008 Springer Science+Business Media B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s11051-008-9551-4
dc.sourceScopus
dc.subjectCrystal quality
dc.subjectGraded barrier
dc.subjectNanocomposites
dc.subjectPhotoluminescence
dc.subjectQuantum dots
dc.subjectState filling
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1007/s11051-008-9551-4
dc.description.sourcetitleJournal of Nanoparticle Research
dc.description.volume11
dc.description.issue8
dc.description.page1947-1955
dc.identifier.isiut000271107400009
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