Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jpowsour.2013.05.184
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dc.titleNitrogen-doped graphene hollow nanospheres as novel electrode materials for supercapacitor applications
dc.contributor.authorFan, W.
dc.contributor.authorXia, Y.-Y.
dc.contributor.authorTjiu, W.W.
dc.contributor.authorPallathadka, P.K.
dc.contributor.authorHe, C.
dc.contributor.authorLiu, T.
dc.date.accessioned2014-10-07T09:52:33Z
dc.date.available2014-10-07T09:52:33Z
dc.date.issued2013
dc.identifier.citationFan, W., Xia, Y.-Y., Tjiu, W.W., Pallathadka, P.K., He, C., Liu, T. (2013). Nitrogen-doped graphene hollow nanospheres as novel electrode materials for supercapacitor applications. Journal of Power Sources 243 : 973-981. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jpowsour.2013.05.184
dc.identifier.issn03787753
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86595
dc.description.abstractNitrogen-doped graphene hollow spheres (NGHS) have been prepared by a simple layer-by-layer assembly of graphene oxide (GO) and polyaniline (PANI) on polystyrene (PS) nanospheres, followed by calcination to remove the PS template and realize the carbonization of PANI. The resultant NGHS has a high nitrogen content of 8.7 atom%, in which various nitrogen species, such as pyridinic-N, pyrrolic-N, and quaternary-N, are detected. The hollow nanostructure of NGHS can provide high electroactive regions, while the effective nitrogen-doping of graphene can increase electron mobility and space charge capacitance. The specific capacitance of NGHS with four bilayers (NGHS-4bi) can reach 381 F g-1 at a current density of 1 A g-1. The greatly enhanced electrochemical performance can be ascribed to the synergistic effect of the hollow nanostructure and nitrogen-doping, suggesting that NGHS as novel electrode materials may have potential applications in high performance energy storage devices. © 2013 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jpowsour.2013.05.184
dc.sourceScopus
dc.subjectGraphene
dc.subjectHollow nanostructure
dc.subjectNitrogen-doping
dc.subjectSupercapacitor
dc.typeArticle
dc.contributor.departmentCHEMICAL ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1016/j.jpowsour.2013.05.184
dc.description.sourcetitleJournal of Power Sources
dc.description.volume243
dc.description.page973-981
dc.description.codenJPSOD
dc.identifier.isiut000324846200128
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