Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10853-011-5661-y
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dc.titleInfluence of substrate and selenization temperatures on the growth of Cu2SnSe3 films
dc.contributor.authorChandra, G.H.
dc.contributor.authorKumar, O.L.
dc.contributor.authorRao, R.P.
dc.contributor.authorUthanna, S.
dc.date.accessioned2014-10-07T09:50:53Z
dc.date.available2014-10-07T09:50:53Z
dc.date.issued2011-11
dc.identifier.citationChandra, G.H., Kumar, O.L., Rao, R.P., Uthanna, S. (2011-11). Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films. Journal of Materials Science 46 (21) : 6952-6959. ScholarBank@NUS Repository. https://doi.org/10.1007/s10853-011-5661-y
dc.identifier.issn00222461
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86454
dc.description.abstractThe effects of substrate temperature and selenization temperature on the structure, composition, electrical and optical properties of Cu 2SnSe3 films were studied systematically. Cu 2SnSe3 films deposited at various substrate temperatures (303-573 K) by the flash evaporation method are found to be non-stoichiometric. To compensate the selenium deficiency and obtain a single-phase, an annealing Cu2SnSe3 films deposited at 573 K was performed in selenium atmosphere. Cu 2SnSe3 films deposited at a substrate temperature of 573 K and then selenized at 673 K were single phase and polycrystalline exhibiting monoclinic structure. The films showed p-type conductivity with a direct band gap of 0.84 eV. © Springer Science+Business Media, LLC 2011.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s10853-011-5661-y
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1007/s10853-011-5661-y
dc.description.sourcetitleJournal of Materials Science
dc.description.volume46
dc.description.issue21
dc.description.page6952-6959
dc.description.codenJMTSA
dc.identifier.isiut000293757000025
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