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Title: Influence of bias voltage on the switching behaviour of CoCrPt-Si O2 perpendicular recording media
Authors: Li, W.M. 
Shi, J.Z.
Lim, W.K.
Ding, J. 
Issue Date: 8-May-2013
Citation: Li, W.M., Shi, J.Z., Lim, W.K., Ding, J. (2013-05-08). Influence of bias voltage on the switching behaviour of CoCrPt-Si O2 perpendicular recording media. Journal of Physics D: Applied Physics 46 (18) : -. ScholarBank@NUS Repository.
Abstract: A systematic investigation of the influence of negative substrate bias on the microstructure and magnetic switching behaviour of CoCrPt : SiO2 perpendicular recording media is performed by varying the negative bias voltage from 0 to 600 V during the deposition of a bottom Ru (or Ru : TiO 2SiO2) intermediate layer. The microscopic structures and the surface morphology are studied by a transmission electron microscope and an atomic force microscope. The crystallographic properties are studied by an x-ray diffractometer. Our observation shows that high biasing is at work to favour the formation of low-energy hexagonal close packed (0 0 2) planes, resulting in high crystallinity of Ru. Addition of oxide to the Ru intermediate layer leads to an increase in grain segregation, which results in a small grain diameter, but broad standard deviation and large surface roughness. Utilization of a bias voltage on the Ru oxide intermediate layer successfully improves the crystal texture of CoCrPt : SiO2 and induces high Hc, a narrow intrinsic switching field distribution and low Hcr45/Hcr0, while maintaining isolated grains and small grain size. © 2013 IOP Publishing Ltd.
Source Title: Journal of Physics D: Applied Physics
ISSN: 00223727
DOI: 10.1088/0022-3727/46/18/185001
Appears in Collections:Staff Publications

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