Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/86432
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dc.titleIdentification of geometrically necessary dislocations in solid phase crystallized poly-Si
dc.contributor.authorLaw, F.
dc.contributor.authorYi, Y.
dc.contributor.authorHidayat
dc.contributor.authorWidenborg, P.I.
dc.contributor.authorLuther, J.
dc.contributor.authorHoex, B.
dc.date.accessioned2014-10-07T09:50:37Z
dc.date.available2014-10-07T09:50:37Z
dc.date.issued2013-07-28
dc.identifier.citationLaw, F., Yi, Y., Hidayat, Widenborg, P.I., Luther, J., Hoex, B. (2013-07-28). Identification of geometrically necessary dislocations in solid phase crystallized poly-Si. Journal of Applied Physics 114 (4) : -. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86432
dc.description.abstractIn this work, the presence of geometrically necessary dislocations (GNDs) in polycrystalline silicon (poly-Si) thin films was detected, suggesting that plastic deformation occurs during the solid phase crystallization (SPC) process of amorphous silicon (a-Si:H). Electron backscatter diffraction was used to characterize dislocations in SPC poly-Si thin films. The elevated temperatures during SPC allow the GNDs to rearrange into arrays, forming low angle grain boundaries. We found that GNDs start forming in poly-Si grains with sizes >∼3 μm, suggesting that larger grains are more defective. GNDs are extra defects in addition to the existing statistically stored dislocations that form during grain growth and hence more care needs to be taken to minimize the formation of GNDs. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4816563
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume114
dc.description.issue4
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000322539300021
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