Please use this identifier to cite or link to this item: https://doi.org/10.1111/j.1551-2916.2010.03816.x
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dc.titleFerroelectric and impedance behavior of La- and Ti-codoped BiFeO 3 thin films
dc.contributor.authorWu, J.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:49:31Z
dc.date.available2014-10-07T09:49:31Z
dc.date.issued2010-09
dc.identifier.citationWu, J., Wang, J. (2010-09). Ferroelectric and impedance behavior of La- and Ti-codoped BiFeO 3 thin films. Journal of the American Ceramic Society 93 (9) : 2795-2803. ScholarBank@NUS Repository. https://doi.org/10.1111/j.1551-2916.2010.03816.x
dc.identifier.issn00027820
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86338
dc.description.abstractTo study the effects of La and Ti cosubstitutions on ferroelectric and impedance behavior of BiFeO3, (Bi0.90La 0.10)FeO3, Bi(Fe0.95Ti0.05)O 3, and (Bi0.90La0.10)(Fe0.95Ti 0.05)O3 thin films were deposited on LaNiO 3-buffered Pt/TiO2/SiO2/Si(100) substrates by off-axis radio frequency sputtering. The (Bi0.90La 0.10)(Fe0.95Ti0.05)O3 thin film exhibits an Ohmic conduction behavior in the range of the electric field investigated, and its leakage current at high electric fields is greatly suppressed. The Curie temperature of (Bi0.90La0.10) (Fe0.95Ti0.05)O3 decreases to ∼690°C due to La and Ti cosubstitutions, and a direct band gap of 2.88 eV is identified for the (Bi0.90La0.10)(Fe0.95Ti 0.05)O3 thin film, demonstrating the increase of a direct band gap with La and Ti codoping. A high remanent polarization (2P r∼102.6 μc/cm2 and 2Ec ∼538.0 kV/cm) as confirmed by positive up negative down was obtained for the (Bi 0.90La0.10)(Fe0.95Ti0.05)O 3 thin film at room temperature because of the great inhibition of the leakage current density at high electric fields. The La and Ti cosubstitutions also improve the fatigue behavior of BiFeO3 thin film. Impedance analyses at different temperatures and frequencies show that the La- and Ti-codoped BFO thin film exhibits rather different dielectric relaxation and conduction mechanism as compared with those of the undoped and La- or Ti-doped BFO thin films, where oxygen vacancies appear to be involved in the dielectric relaxation and conduction processes of these thin films. © 2010 The American Ceramic Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1111/j.1551-2916.2010.03816.x
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1111/j.1551-2916.2010.03816.x
dc.description.sourcetitleJournal of the American Ceramic Society
dc.description.volume93
dc.description.issue9
dc.description.page2795-2803
dc.identifier.isiut000281657600079
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