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|Title:||Ferroelectric and dielectric behavior of heterolayered PZT thin films||Authors:||Kartawidjaja, F.C.
|Issue Date:||2007||Citation:||Kartawidjaja, F.C., Sim, C.H., Wang, J. (2007). Ferroelectric and dielectric behavior of heterolayered PZT thin films. Journal of Applied Physics 102 (12) : -. ScholarBank@NUS Repository.||Abstract:||Heterolayered Pb (Zr1-x Tix) O3 thin films consisting of different numbers of alternating Pb (Zr0.7 Ti0.3) O3 and Pb (Zr0.3 Ti0.7) O3 layers are studied. They exhibit (001) (100) preferred orientation and dense microstructure when baked at 500 °C and then thermally annealed at 650 °C. They demonstrate a considerably low leakage current density in the order of 10-7 A cm2. Their ferroelectric and dielectric properties are improved with increasing number of alternating Pb (Zr0.7 Ti0.3) O3 and Pb (Zr0.3 Ti0.7) O3 layers, thereby the six-heterolayered PZT thin film shows a much enhanced remanent polarization of 41.3 μC cm2 and relative permittivity of 710 at 1 kHz. In fatigue test, a wake-up phenomenon is observed with the heterolayered films, where the degradation in switchable polarization is delayed. At elevated temperatures, the wake-up phenomenon was reduced, leading to fatigue degradation at a relatively lower number of switching cycles. The phenomenon is related to the injected electron causing oxygen vacancies, the accumulation of which impedes the domain switching. © 2007 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/86335||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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